ITEM ID: 270063

TEL Probus

TEL Probus-SiC ist eine SiC-Epitaxieanlage (Silicon Carbide Epitaxial Film Growth Tool) von Tokyo Electron (TEL) zur Herstellung von SiC-Epitaxieschichten für Leistungshalbleiter.

1 unit @ Best Price

MAKE: Tokyo Electron Limit

MODEL: Probus-SiC

Villach, Austria

SPECS

Manufacturer Tokyo Electron Limit
Model Probus-SiC
Wafer Size Range
Minimum 100 mm
Maximum 150 mm
Accessories

non

Other Information

CLF3 tool

no spare parts

Condition Good
Year of Manufacture 2018
Power Requirements 50/60 Hz 1 Phase

S&H

All items are sold on condition `as is and where is`. Ex work from current location excluding de-installation, de-hook up, discharge, packaging, crating and delivery. We are not responsible for any damage incurred during shipment.

Payment

100% downpayment